Influence of the Cu content on the electronic transport of Cu(In,Ga)Se2 and on the shunting behaviour of Cu(In,Ga)Se2 solar cells

Virtuani, Alessandro and Lotter, Erwin and Powalla, Michael and Rau, Uwe and Werner, Jürgen H. and Acciarri, Maurizio (2006) Influence of the Cu content on the electronic transport of Cu(In,Ga)Se2 and on the shunting behaviour of Cu(In,Ga)Se2 solar cells. Journal of Applied Physics, 014906 (1). p. 14906.

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Abstract

The paper presents the structural and electrical characterizations of Cu(In,Ga)Se2 thin films and thin-film solar cells realized with different Cu contents in the absorber material. It is shown that the bulk resistivity of the Cu(In,Ga)Se2 thin films (measured in coplanar geometry) dramatically increases with decreasing Cu content. Simultaneously, the shunt resistance Rp of the Cu(In,Ga)Se2 solar cells increases with decreasing Cu content in the absorber material. For a wide range of Cu contents, the resistivity of the thin films is directly proportional to Rp of the solar cell made from the same absorber material. We propose that Rp in Cu(In,Ga)Se2 solar cells originates from highly localized shunt regions in the absorber material. The higher Rp of cells made from Cu-poor material is then due to the high resistivity of the embedding Cu-poor material resistively suppressing extensive current flow towards these shunt regions. Further, we observe an increase of the film resistivity by two orders of magnitude if the Cu(In,Ga)Se2 absorbers are produced using a Na blocking layer on the glass substrate. However, the high resistivity of these Na-free samples does not go along with an increase of Rp in the corresponding solar cells, indicating that the high resistivity of Na-free Cu(In,Ga)Se2 results from electrostatic barriers at the grain boundaries and is not a bulk property.

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