Pravettoni, Mauro and Virtuani, Alessandro (2011) Impact of a finite shunt resistance on the dark spectral response of a-Si:H/μc-Si thin-film multi-junction photovoltaic devices. In: Yan, Baojie and Higashi, Seiichiro and Tsai, Chuang Chuang and Wang, Qi and Gleskova, Helena, (eds.) Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology. MRS Proceedings, 1321 . Materials Research Society 2011, pp. 5-8.
Full text not available from this repository.Abstract
Hydrogenated amorphous silicon (a-Si:H) multi-junction devices have demonstrated a way to increase the efficiency of a-Si:H thin-film photovoltaic (PV) modules, which is now well above 10%. Since the current–matching behaviour of all sub-cells is a critical aspect, the measurement of the spectral response (SR) of all junctions provides valuable information to optimize the device performance under a given spectral distribution. In this work the authors investigate the impact of low shunt resistances on the SR of a double-junction a-Si:H/μc-Si PV module. The origin of a low shunt resistance in a-Si:H multi-junction devices is revised. A simple theoretical approach is then used to describe the anomalous dark SR observed experimentally as a consequence of the presence of low shunt resistances. The dark SR allows therefore to detect the presence of shunts and discriminate the defective sub-cell.
| Item Type: | Chapter in book |
|---|---|
| Subjects: | Physical sciences > Physics > Chemical physics > Solid-state physics Physical sciences > Astronomy > Solar & solar terrestrial physics |
| Department/unit: | Dipartimento ambiente costruzioni e design > Istituto sostenibilità applicata all'ambiente costruito |
| Depositing User: | Mauro Pravettoni |
| Date Deposited: | 28 Feb 2013 15:25 |
| Last Modified: | 28 Feb 2013 15:25 |
| URI: | http://repository.supsi.ch/id/eprint/1943 |
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