Electron-Beam-Induced current imaging for the characterization of structural defects in Si1-xGex films grown by LEPECVD

Virtuani, Alessandro and Marchionna, Stefano and Acciarri, Maurizio and Isella, Giovanni and von Känel, Hans (2006) Electron-Beam-Induced current imaging for the characterization of structural defects in Si1-xGex films grown by LEPECVD. Materials Science in Semiconductor Processing, 9 (4-5). pp. 798-801. ISSN 1369-8001

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Abstract

We present a comparison of two different techniques for the evaluation of Threading Dislocation Density (TDD) in Si1−xGex graded buffers: chemical etching and Electron-Beam-Induced-Current (EBIC) imaging. The samples analyzed consist of a series of linearly graded Si1−xGex buffers terminated by a constant composition layer with Ge concentration varying between 0.2 and 0.9. The films were deposited on Si(1 0 0) wafers by means of Low Energy Plasma Enhanced CVD (LE-PECVD). Our results indicates that EBIC proves to be a versatile method, which provides reliable information on the defect concentration up to a Ge concentration of x=0.4x=0.4. For higher values of x(x=0.7)(x=0.7) the information is approximated but yet reliable for the purpose of optimising the growth process. In order to perform EBIC measurements on samples with higher Ge concentrations (x=0.9)(x=0.9), the Schottky diode fabrication has to be improved.

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