Virtuani, Alessandro and Lotter, Erwin and Powalla, Michael and Rau, Uwe and Werner, Jürgen H. (2004) Highly resistive Cu(In,Ga)Se2 absorbers for improved low-irradiance performance of thin-film solar cells. Thin Solid Films, 451-45. pp. 160-165.
Full text not available from this repository.Abstract
This paper reports on the investigation of Cu(In,Ga)Se2 thin-film solar cells for application under low irradiance conditions with irradiance E<1 mW/cm2. Under such conditions, a parallel resistance Rp>10 kΩ cm2 of the solar cells is required. We find that Cu(In,Ga)Se2 absorber material with a low Cu content of 18 at.% provides Rp>100 kΩ cm2 and enables solar cells to exhibit a power conversion efficiency of 6% under an irradiance E=0.1 mW/cm2. Under such conditions, standard Cu(In,Ga)Se2 absorber material with a Cu content of 21.5 at.% is not a suitable photovoltaic absorber material because the Rp of the corresponding solar cells is too low. Further investigations of different solar cells with a variety of Cu contents in the absorber material reveal that the shunt resistance of the solar cells is proportional to the bulk resistivity of the corresponding Cu(In,Ga)Se2 absorber materials. This observation leads us to the proposition that the parallel resistance in Cu(In,Ga)Se2 solar cells originates from highly localised shunt regions in the absorber material.
| Item Type: | Scientific journal article, Newspaper article or Magazine article |
|---|---|
| Uncontrolled Keywords: | Cu(In,Ga)Se2; Indoor application; Parallel resistance |
| Subjects: | Physical sciences > Materials science Physical sciences > Physics |
| Depositing User: | Alessandro Virtuani |
| Date Deposited: | 18 Jul 2013 13:44 |
| Last Modified: | 11 May 2016 14:58 |
| URI: | http://repository.supsi.ch/id/eprint/2556 |
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